sy mbo s1af s1bf s1df s1gf s1j f s1k f s1mf unit characteristic typical thermal resistance (note 2) r typical junction capacitance (note 1) c s1af-s1mf -65 to +150 c features maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 5 0 100 200 400 600 800 1000 v rms reverse voltage v r(rm s) 3 5 70 140 280 420 560 700 v av erage rectified output current @t l = 100 c i o 1.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward v o ltage @i f = 1. 0a v fm 1.10 v p eak reverse current @t a = 25 c a t rated dc blocking voltage @t a = 125 c i rm 5. 0 200 a j 15 pf jl 30 k / w operat i ng and storage temperature range t j, t stg 1 of 2 s1af-s1mf 2. m ount ed on p.c. board with 8.0mm 1. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. note: 2 land area. z ibo seno electronic engineering co., ltd. www.senocn.com sm af su rge overload rating to 30a peak ideally suited for automatic assembly built-in strain relief classification rating 94v-o low power loss weight: 0.037 grams (approx.) features ! ! lo w forward voltage drop ! ! ! ! plastic case material has ul flammability mechanic al d ata ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version 3.60 3.20 2.80 2.40 dim m in max a b c d e f g all d i mensions in mm 0.20 0.10 4.80 4.40 1.10 0.90 0.90 - 1.43 1.38 ca se: smaf, molded plastic a b c d f e g 1.0a su rface mount glass passivated rectifier
0 40 80 120 0.01 0.1 1.0 10 100 1000 ir, inst ant aneous reverse current ( a) m percent of ra ted peak reverse voltage (%) fig. 4 typical reverse characteristics t = 125 c j t = 25 c j 1 10 100 5 10 15 20 25 30 number of cycles @ 60hz fig.3max non-repetitive peak fwd surge current i , peak forward surge current (a) fsm 8.3ms single half sine-wave jedec method 2 of 2 s1af-s1mf s1af-s1mf z ibo seno electronic engineering co., ltd. www.senocn.com 0.6 0 .8 1.0 1.2 1.4 1.6 0.01 0.1 1.0 i , instantaneous forward current (a) f v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25oc p ulse width = 300s 2% duty cycle j 10 0 0.2 0.4 0.6 0.8 1.0 406080100120140160180 t, lead temperature ( c ) fig.1forwardcurrentderatingcurve l i , a verage output current (a) o resistive or inductive load
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